Influence of Gate Driver Loop Inductance on SiC MOSFET Module Turn-on Gate Voltage Oscillation in High Power Application
Author:
Affiliation:
1. Southwest Jiaotong University,School of Electrical Engineering,Chengdu,China
2. Eaton Corporation,Eaton Research Labs,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9941506/9941741/09941889.pdf?arnumber=9941889
Reference8 articles.
1. Common source inductance introduced self-turn-on in MOSFET turn-off transient
2. Design of Acceptable Stray Inductance Based on Scaling Method for Power Electronics Circuits
3. Influence of Paralleled SiC MOSFET on Turn-off Gate Voltage Oscillation
4. A comprehensive study on the gate-loop stability of the SiC MOSFET
5. Modeling and Analysis of SiC MOSFET Switching Oscillations
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2. Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. Study on Estimation Method of Stray Inductance and Its Influence on Switching Loss for SiC MOSFET;2023 IEEE 6th Student Conference on Electric Machines and Systems (SCEMS);2023-12-07
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