Study on Estimation Method of Stray Inductance and Its Influence on Switching Loss for SiC MOSFET
Author:
Affiliation:
1. Zhejiang University,College of Electrical Engineering,Hangzhou,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10379197/10379202/10379277.pdf?arnumber=10379277
Reference8 articles.
1. Comparison of switching performance between GaN and SiC MOSFET via 13. 56MHz Half-bridge Inverter
2. Design and evaluation of SiC-based high power density inverter, 70kW/liter, 50kW/kg
3. Effect of Inverter Output dv/dt with Respect to Gate Resistance and Loss Comparison with dv/dt Filters for SiC MOSFET based High Speed Machine Drive Applications
4. Gate Driver Development and Stray Inductance Extraction of 10 kV SiC MOSFET Module for a Switched-Capacitor MMC Application
5. Influence of Gate Driver Loop Inductance on SiC MOSFET Module Turn-on Gate Voltage Oscillation in High Power Application
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