Ultra-Low-Noise InGaAs mHEMT Technology and MMICs for Space Missions and Radio Astronomy
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10187960.pdf?arnumber=10187960
Reference14 articles.
1. A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures
2. Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
3. High-Accuracy Noise Figure Measurements Using the PNA-X Series Network Analyzer (AN 1408-20),2014
4. W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
5. C-Band Low-Noise Amplifier MMIC with an Average Noise Temperature of 44.5 K and 24.8 mW Power Consumption
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2. A <5 dB NF, > 17 dBm OP1 dB F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. Low-Noise Amplifiers for the Arctic Weather Satellite;2023 53rd European Microwave Conference (EuMC);2023-09-19
4. A D-Band Low-Noise Amplifier MMIC in a 70-nm GaN HEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications;IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium;2023-07-16
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