A D-Band Low-Noise Amplifier MMIC in a 70-nm GaN HEMT Technology
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF,Freiburg im Breisgau,Germany,79108
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288876.pdf?arnumber=10288876
Reference13 articles.
1. First demonstration of broadband W-band and D-band GaN MMICs for next generation communication systems
2. First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth
3. A SiGe HBT $D$ -Band LNA With Butterworth Response and Noise Reduction Technique
4. D-band low-noise amplifier MMIC with 50 technology;weber;IEEE MTT-S Int Microw Symp Dig,2017
5. A Broadband 70–110-GHz E-/W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology
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1. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19
2. A <5 dB NF, > 17 dBm OP1 dB F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. A $>$120-GHz Bandwidth, $>$20-dBm Pout, $<$6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology;IEEE Transactions on Microwave Theory and Techniques;2024
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