Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study
Author:
Funder
PowerAmerica and the Department of Energy (DOE)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405109.pdf?arnumber=9405109
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations;IEEE Journal of the Electron Devices Society;2024
2. Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
3. DreamWalk: Dynamic remapping and multiperspectivity for large‐scale redirected walking;Computer Animation and Virtual Worlds;2023-07-09
4. Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
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