Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations-Reference-Cited by-同舟云学术

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Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations

Published:2023-12-04 Issue: Volume: Page:1-6
ISSN:
Container-title:2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Mancini Stephen A¹,Jang Seung Yup¹,Chen Zeyu²,Kim Dongyoung¹,Raghothamachar Balaji²,Dudley Michael²,Sung Woongje¹

Affiliation:

1. University at Albany, State University of New York,College of Nanoscale Science and Engineering,Albany,NY,USA,12203

2. Stoney Brook University,Department of Material Science and Chemical Engineering,Stoney Brook,NY,USA,11794

Funder

National Renewable Energy Laboratory

U.S. Department of Energy

Advanced Manufacturing Office

Argonne National Laboratory

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382208.pdf?arnumber=10382208

Reference9 articles.

1. Fundamentals of Power Semiconductor Devices

2. A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

3. Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures

4. Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study

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