Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures-Reference-Cited by-同舟云学术

Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Mancini Stephen A.¹,Yup Jang Seung¹,Chen Zeyu²,Kim Dongyoung¹,Lynch Justin¹,Liu Yafei²,Raghothamachar Balaji²,Kang Minseok³,Agarwal Anant³,Mahadik Nadeemullah⁴,Stahlbush Robert⁴,Dudley Michael²,Sung Woongje¹

Affiliation:

1. State University of New York Polytechnic Institute,College of Nanoscale Science and Engineering,Albany,NY,USA,12203

2. Stony Brook University,Department of Material Science and Chemical Engineering,Stony Brook,NY,USA,11794

3. The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210

4. Naval Research Laboratory,Washington DC,USA,20375

Funder

National Renewable Energy Laboratory

U.S. Department of Energy

Advanced Manufacturing Office

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764538.pdf?arnumber=9764538

Reference10 articles.

1. Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study

2. Effect of crystallographic dislocations on the reverse performance of 4H-SiC p–n diodes;zhao;Materials Science Forum,2010

3. Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap

4. A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

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1. Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter;Defect and Diffusion Forum;2024-08-22

2. Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures;Defect and Diffusion Forum;2024-08-22

3. Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations;IEEE Journal of the Electron Devices Society;2024

4. Exploring the Impact of Implant Temperature and a Novel Aluminum Ion Source on the Electrical Performance of 4H-SiC PiN Diodes;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

5. Edge Termination Design Considerations for 1.2kV 4H-SiC MOSFETs While Utilizing Room Temperature Ion Implantations;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04