Analysis of the interactions of HCD under “On” and “Off” state modes for 28nm FDSOI AC RF modelling
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405214.pdf?arnumber=9405214
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06
2. Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. Device Reliability to Circuit Qualification: Insights and Challenges;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
4. New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
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