Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation
Author:
Affiliation:
1. Fraunhofer IPMS,Center Nanoelectronic Technologies,Germany
2. GlobalFoundries,Germany
3. Brandenburg University of Technology,Ulrich-L.-Rohde Chair of RF and Microwave Techniques,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288886.pdf?arnumber=10288886
Reference10 articles.
1. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
2. A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology
3. Analysis of hot-carrier degradation in 22nm FDSOI transistors using RF small-signal characteristics;huynh;2020 13th German Microwave Conference (GeMiC),2020
4. Analysis of the interactions of HCD under “On” and “Off” state modes for 28nm FDSOI AC RF modelling
5. Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement
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