New trends in high voltage MOSFET based on wide band gap materials

Author:

Godignon P.,Soler V.,Cabello M.,Montserrat J.,Rebollo J.,Knoll L.,Bianda E.,Mihaila A.

Publisher

IEEE

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Investigation of Short-Circuit Failure Mechanism in 1.2kV SiC MOSFET;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

3. Enhanced Efficiency of MV Hybrid MMC under Extended Modulation using Si/SiC devices;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. The role of power device technology in the electric vehicle powertrain;International Journal of Energy Research;2022-09-12

5. Reliability and Failure Investigation of SiC MOSFET Under Avalanche;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

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