Investigation of Short-Circuit Failure Mechanism in 1.2kV SiC MOSFET-Reference-Cited by-同舟云学术

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Investigation of Short-Circuit Failure Mechanism in 1.2kV SiC MOSFET

Published:2023-11-10 Issue: Volume:1 Page:1879-1884
ISSN:
Container-title:2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
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Author:

Luo Houcai¹,Wu Huan¹,Zhang Jingping¹,Zheng Bofeng¹,Chen Xianping²

Affiliation:

1. Chongqing University,Key Laboratory of Optoelectronic Technology & Systems,Chongqing,China,400044

2. System Security and New Technology, Chongqing University,Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China and State Key Laboratory of Power Transmission Equipment,Chongqing,China,400044

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10394673/10394683/10395278.pdf?arnumber=10395278

Reference19 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

3. Silicon carbide power device development for industrial markets

4. New trends in high voltage MOSFET based on wide band gap materials

5. Overview of Silicon Carbide Technology: Device, Converter, System, and Application;Fei;CPSS Transactions on Power Electronics and Applications,2017

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