Reliability and Failure Investigation of SiC MOSFET Under Avalanche-Reference-Cited by-同舟云学术

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Reliability and Failure Investigation of SiC MOSFET Under Avalanche

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Luo Houcai¹,Zhang Jingping¹,Wu Huan¹,Zheng Fengbo¹,Qian Jing¹,Chen Xianping²

Affiliation:

1. Chongqing University,Key Laboratory of Optoelectronic Technology & Systems,Chongqing,China,400044

2. Chongqing University,Key Laboratory of Optoelectronic Technology & Systems Education Ministry of China and State Key Laboratory of Power Transmission Equipment & System Security and New Technology,Chongqing,China,400044

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873233.pdf?arnumber=9873233

Reference12 articles.

1. Thermal Stability of SiC-MOSFETs at High Temperatures

2. Review of Silicon Carbide Power Devices and Their Applications

3. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

4. Recent review on failures in silicon carbide power MOSFETs

5. An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults;Electronics;2024-03-06

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