22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

Author:

Ong S.N.,Chan L.H.K.,Chew K.W.J.,Lim C.K.,Oo W. L.,Bellaouar A.,Zhang C.,Chow W.H.,Chen T.,Rassel R.,Wong J.S.,Wan C.W.F.,Kim J.,Seet W.H.,Harame D.

Publisher

IEEE

Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology;Nanomaterials;2024-05-09

2. An Ultralow Power Short-Range 60-GHz FMCW Radar in 22-nm FDSOI CMOS;IEEE Transactions on Microwave Theory and Techniques;2024-04

3. A 76–81-GHz Power Amplifier With 14.6-dBm Psat and 25.1% PAE on 22-nm FDSOI Technology;IEEE Microwave and Wireless Technology Letters;2024-01

4. High-Frequency Performance with Microwave and Millimeter-Wave Methods;2023 International Conference on Emerging Research in Computational Science (ICERCS);2023-12-07

5. Radar Characterization of a Broadband 77 GHz IQ Transceiver Chipset in 22 nm FDX CMOS;2023 20th European Radar Conference (EuRAD);2023-09-20

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