A 76–81-GHz Power Amplifier With 14.6-dBm P<sub>sat</sub> and 25.1% PAE on 22-nm FDSOI Technology-Reference-Cited by-同舟云学术

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A 76–81-GHz Power Amplifier With 14.6-dBm P_sat and 25.1% PAE on 22-nm FDSOI Technology

Published:2024-01 Issue:1 Volume:34 Page:84-87
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Mehr Payam¹^ORCID,Elsayed Nourhan¹^ORCID,Lee Jaeyoung¹,Lu Liyou¹,Zhang Chi¹

Affiliation:

1. GlobalFoundries, Essex, VT, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10385033/10328921.pdf?arnumber=10328921

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Class-J/F 60 GHz Power Amplifier with 42.3% Power Added Efficiency in FDSOI CMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

2. Ka-Band CMOS Stacked-FET Power Amplifier With Pre-Distorted Driver Stage for 5G Applications;IEEE Access;2024

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