A highly integrated dual-band SiGe power amplifier that enables 256 QAM 802.11ac WLAN radio front-end designs-Reference-Cited by-同舟云学术

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A highly integrated dual-band SiGe power amplifier that enables 256 QAM 802.11ac WLAN radio front-end designs

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Radio Frequency Integrated Circuits Symposium
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Author:

Huang Chun-Wen Paul,Antognetti Philip,Lam Lui,Quaglietta Tony,Doherty Mark,Vaillancourt William

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6230821/6242137/06242269.pdf?arnumber=6242269

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 8–12 GHz power amplifier with high out-of-band rejection;Microelectronics Journal;2024-02

2. 0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs R_onx C_offSwitch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions;2022 International Electron Devices Meeting (IEDM);2022-12-03

3. A Fully Integrated −32-dB EVM Broadband 802.11abgn/ac PA With an External PA Driver in WLP 40-nm CMOS;IEEE Transactions on Microwave Theory and Techniques;2019-05

4. A 5-GHz WLAN RF CMOS Power Amplifier With a Parallel-Cascoded Configuration and an Active Feedback Linearizer;IEEE Transactions on Microwave Theory and Techniques;2017-09

5. A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit;Chinese Journal of Electronics;2017-05

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