0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs R<sub>on</sub>x C<sub>off</sub>Switch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions-Reference-Cited by-同舟云学术

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0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs R_onx C_offSwitch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Gianesello F.¹,Charbuillet C.¹,Derrier N.¹,Muller D.¹,Diouf C.¹,Ney D.¹,Deglise-Favre C.¹,Sicard I.¹,Nsibi M. Ali¹,Debroucke R.¹,Buczko M.¹,Legrand C.A.¹,Cathelin Ph.¹,Paillardet F.¹,Mas J.C.¹,Chevalier P.¹,Gloria D.¹

Affiliation:

1. STMicroelectronics, 850 rue Jean Monet,Crolles,France,38920

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019469.pdf?arnumber=10019469

Reference16 articles.

1. Advanced 200-mm RF SOI Technology exhibiting 78 fs RON×COFF and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM;gianesello;IEEE Radio Frequency Integrated Circuits (RFIC) Symp,2022

2. A highly integrated dual-band SiGe power amplifier that enables 256 QAM 802.11ac WLAN radio front-end designs

3. Accurate modelling and optimization of inhomogeneous substrate related losses in SPDT switch IC design for WLAN applications

4. A 0.5 µm CMOS T/R Switch for 900 MHz Wireless Applications;huang;IEEE Journal of Solid-State Circuits,2001

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