A 5.7–6.4GHz GaAs HBT Power Amplifier with a Gain Enhanced Bias Circuit
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Published:2017-05
Issue:3
Volume:26
Page:502-507
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ISSN:1022-4653
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Container-title:Chinese Journal of Electronics
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language:en
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Short-container-title:Chin. j. electron.
Author:
Zheng Ruiqing1,
Zhang Guohao1,
Yu Kai1,
Li Sizhen1,
Zheng Yaohua1
Affiliation:
1. School of Information EngineeringGuangdong University of TechnologyGuangzhou510006China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Applied Mathematics,Electrical and Electronic Engineering
Cited by
1 articles.
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