Leakage Power Attack and Half Select Issue Resilient Split 8T SRAM Cell-Reference-Cited by-同舟云学术

Leakage Power Attack and Half Select Issue Resilient Split 8T SRAM Cell

Published:2023-06-26 Issue: Volume: Page:
ISSN:
Container-title:2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
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Author:

Naz Syed Farah¹,Chawla Mansi²,Shah Ambika Prasad¹

Affiliation:

1. Indian Institute of Technology Jammu,J&K,India

2. Guru Nanak Dev Engineering College,Ludhiana,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10198027/10198028/10198034.pdf?arnumber=10198034

Reference6 articles.

1. A 28nm 256kb 6T-SRAM with 280mV improvement in Vmin using a dual-split-control assist scheme;chang;IEEE ISSCC,2015

2. A 65nm 4kb algorithm-dependent CIM SRAM unit-macro with 2.3ns and 55.8TOPS/W fully parallel product-sum operation for binary DNN edge processors;khwa,2018

3. A Memory Hierarchy Protected against Side-Channel Attacks

4. Leakage Power Attack-Resilient Symmetrical 8T SRAM Cell

5. A 40-nm 256kb 0.6-V operation half-select resilient 8T SRAM with sequential writing technique enabling 367mV Vddmin reduction;terada;ISQED,2012

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