Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond-Reference-Cited by-同舟云学术

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Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Published:2020-03 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Custom Integrated Circuits Conference (CICC)
language:
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Author:

Lee Hyung-Jin,Callender Steven,Rami Said,Shin Woorim,Yu Qiang,Marulanda Jose Mauricio

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9060424/9075871/09075914.pdf?arnumber=9075914

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cost-Effective Co-Optimization of RF Process Technology Targeting Performances/Power/Area Enhancements for RF and mmWave Applications;Electronics;2024-06-27

2. Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications;Semiconductor Science and Technology;2024-05-03

3. SiGe/Si Superlattice Ferroelectric HfZrO₂ ΩFET and CMOS Inverter With SS_min,n = 62.4 mV/dec, I_ON/I_OFF > 1.0 × 10⁷, and Voltage Gain = 111.4 V/V;IEEE Electron Device Letters;2024-02

4. Radio frequency FinFET bulk silicon technology;New Materials and Devices Enabling 5G Applications and Beyond;2024

5. Introduction to 5G applications and beyond;New Materials and Devices Enabling 5G Applications and Beyond;2024

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