Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region-Reference-Cited by-同舟云学术

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Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

Published:2007-10 Issue:10 Volume:54 Page:2778-2785
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Toh Eng-Huat,Wang Grace Huiqi,Chan Lap,Lo Guo-Qiang,Samudra Ganesh,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4317723/04317751.pdf?arnumber=4317751

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