Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel
Author:
Affiliation:
1. Atomera Inc.,Los Gatos,CA,USA
2. Semirel Corp,Chester,NJ,USA
3. San Jose State University,Dept. of Electrical Engineering,San Jose,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9975349/9975304/09975306.pdf?arnumber=9975306
Reference10 articles.
1. Electron mobility enhancement in (100) oxygen-inserted silicon channel
2. MOSFET performance and scalability enhancement by insertion of oxygen layers
3. Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole
4. Source engineering on Oxygen-Inserted Si channel for gate length scaling of low-voltage switch devices
5. Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
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