Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole-Reference-Cited by-同舟云学术

Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole

Published:2021-11-14 Issue:18 Volume:130 Page:185303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Smith Jeffrey A.¹^ORCID,Ni Kai¹²^ORCID,Takeuchi Hideki³^ORCID,Stephenson Robert J.³,Chen Yi-Ann³,Hytha Marek³^ORCID,Li Shuyi³,Nicollian Paul E.⁴,Mears Robert J.³,Datta Suman¹

Affiliation:

1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

2. Department of Electrical Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA

3. Atomera Incorporated, Los Gatos, California 95032, USA

4. Semiconductor Reliability Incorporated, Chester, New Jersey 07930, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0068002

Reference38 articles.

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5. Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers

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1. Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel;2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2022-11-28