MOSFET performance and scalability enhancement by insertion of oxygen layers-Reference-Cited by-同舟云学术

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MOSFET performance and scalability enhancement by insertion of oxygen layers

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
language:
Short-container-title:

Author:

Xu N.,Damrongplasit N.,Takeuchi H.,Stephenson R. J.,Cody N. W.,Yiptong A.,Huang X.,Hytha M.,Mears R. J.,Liu Tsu-Jae King

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06478990.pdf?arnumber=6478990

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

2. Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel;2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2022-11-28

3. Source engineering on Oxygen-Inserted Si channel for gate length scaling of low-voltage switch devices;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission;ECS Journal of Solid State Science and Technology;2016

5. Electron mobility enhancement in (100) oxygen-inserted silicon channel;Applied Physics Letters;2015-09-21

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