Proton, Electron, and Heavy Ion Single Event Effects on the HAS2 CMOS Image Sensor-Reference-Cited by-同舟云学术

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Proton, Electron, and Heavy Ion Single Event Effects on the HAS2 CMOS Image Sensor

Published:2014-08 Issue:4 Volume:61 Page:1909-1917
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Beaumel Matthieu,Herve Dominique,Van Aken Dirk,Pourrouquet Pierre,Poizat Marc

Funder

ESA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6878498/06819476.pdf?arnumber=6819476

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CMOS图像传感器质子位移损伤效应实验与分析;Acta Optica Sinica;2024

2. Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU;Electronics;2023-06-27

3. Proton Radiation Effects of CMOS Image Sensors on Different Star Map Recognition Algorithms for Star Sensors;Electronics;2023-03-30

4. Single event transient effect of frontside and backside illumination image sensors under proton irradiation;Acta Physica Sinica;2022

5. Single Event Effects in 0.18 μm Pinned Photodiode CMOS Image Sensors: SEU and SEFI;Microelectronics Reliability;2021-02

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