Author:
Cai Yu long,Guo Qi,Wen Lin,Zhou Dong,Feng Jie,Liu Bing kai,Fu Jing,Li Yu Dong
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Bigas M, Cabruja E, Forest J, et al, “Review of CMOS image sensor,” Microelectron. J., 2006,37(5):433–451.
2. Turchetta R, Berst J D, Casadei B, et al, “A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSL CMOS technology,” Nucl. Instrum. Methods A 2001 458(3):677–689.
3. Hopkinson G R, Mohammadzadeh A, Harboe-Sorensen R, “Radiation effects on a radiation-tolerant CMOS active pixel sensor,” J. Environ. Sci., 2004, 51(5):45–51.
4. Beaumel M, Hervé D, Aken D V, et al, “Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor,” European Conference on Radiation and ITS Effects on Components and Systems. IEEE, 2014:1909–1917.
5. Lalucaa V, Goiffon V, Magnan P, et al, “Single event effects in CMOS image sensors,” IEEE Trans. Nucl. Sci. 2013 60(4):2494–2502.
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