Proton single event effects on 8T global exposure CMOS image sensors-Reference-Cited by-同舟云学术

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Proton single event effects on 8T global exposure CMOS image sensors

Published:2024-06-28 Issue:9-10 Volume:179 Page:1352-1365
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Cui Yi-Hao¹²³,Feng Jie¹²,Li Yu-Dong¹²,Wen Lin¹²,Liu Bing-Kai¹²,Yang Zhi-Kang¹²³,Guo Qi¹²

Affiliation:

1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, People’s Republic of China

2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi, People’s Republic of China

3. University of Chinese Academy of Sciences, Beijing, People’s Republic of China

Funder

National Natural Science Foundation

West Light Talent Training Plan of the Chinese Academy of Sciences

Youth Science and Technology Talents Project of Xinjiang Uygur Autonomous Region

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2024.2340580

Reference27 articles.

1. Review of CMOS image sensors

2. Radiation-Induced Defects in 8T-CMOS Global Shutter Image Sensor for Space Applications

3. A High Full Well Capacity CMOS Image Sensor for Space Applications

4. CMOS and CCD image sensors for space applications

5. Overview of CMOS process and design options for image sensor dedicated to space applications

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