A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices
Author:
Funder
APETT project
Innovation Fund Denmark
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/8636215/08375808.pdf?arnumber=8375808
Cited by 68 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal cycling characterization of an integrated low-inductance GaN eHEMT power module;Microelectronics Reliability;2024-10
2. GaN-HEMT Power Module of Aluminum-Clad Printed Circuit Boards for Small Power Loop Inductance and High Cooling Performance;IEEE Transactions on Power Electronics;2024-10
3. Hybrid Double-Side Cooled Package for Multichip GaN Power Module With Optimal Current Sharing at High Switching Speed;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-08
4. Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging;IEEE Transactions on Power Electronics;2024-07
5. Design and Optimization of 100 V GaN Multi-chip Power Micromodule Based on AlN DBC Substrate;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28
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