GaN-HEMT Power Module of Aluminum-Clad Printed Circuit Boards for Small Power Loop Inductance and High Cooling Performance
Author:
Affiliation:
1. Faculty of Life, Environment, Natural Science and Technology, Okayama University, Okayama, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/63/10659245/10606088.pdf?arnumber=10606088
Reference17 articles.
1. An Efficient High-Frequency Drive Circuit for GaN Power HFETs
2. Efficiency Comparison Between Si-IGBT-Based Drive and GaN-Based Drive
3. High-Frequency Three-Phase Interleaved LLC Resonant Converter With GaN Devices and Integrated Planar Magnetics
4. Design, Operation, and Loss Characterization of a 1-kW GaN-Based Three-Level Converter at Cryogenic Temperatures
5. 99% Efficient 2.5-kW Four-Level Flying Capacitor Multilevel GaN Totem-Pole PFC
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