On the Techniques to Utilize SiC Power Devices in High- and Very High-Frequency Power Converters-Reference-Cited by-同舟云学术

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On the Techniques to Utilize SiC Power Devices in High- and Very High-Frequency Power Converters

Published:2019-12 Issue:12 Volume:34 Page:12181-12192
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Tong Zikang^ORCID,Gu Lei^ORCID,Ye Zhechi^ORCID,Surakitbovorn Kawin^ORCID,Rivas-Davila Juan^ORCID

Funder

National Science Foundation

Alcatel-Lucent

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

https://ieeexplore.ieee.org/ielam/63/8829148/8665880-aam.pdf

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode;Results in Physics;2024-07

2. Class-Φ2 Power Amplifier With Resonant Gate Driver: High-Efficiency Power Amplifier for 50 MHz;IEEE Microwave Magazine;2024-06

3. Analysis and Design of Load-Independent Series Resonant Power Amplifier With Constant Current Output and Its Application for WPT System;IEEE Transactions on Power Electronics;2024-05

4. Advance understanding of the synthesis process, special performance, and multidiscipline applications of SiC nanowires and the constructed composites;Journal of Materials Research and Technology;2024-03

5. Comparison of GaN and Si Devices in a 50 MHz Class Φ₂ Converter;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

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