Comparison of GaN and Si Devices in a 50 MHz Class Φ2 Converter
Author:
Affiliation:
1. Stanford University,Electrical Engineering,Stanford,CA,94305
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509319.pdf?arnumber=10509319
Reference8 articles.
1. Opportunities and Challenges in Very High Frequency Power Conversion
2. Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies
3. COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters
4. How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs
5. On the Techniques to Utilize SiC Power Devices in High- and Very High-Frequency Power Converters
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