Al-Nanoparticle Sensitized β-Ga2O3-Based Solar-Blind Photodetector Fabricated via Focused Ion Beam Micro/Nano Processing-Reference-Cited by-同舟云学术

Al-Nanoparticle Sensitized β-Ga₂O₃-Based Solar-Blind Photodetector Fabricated via Focused Ion Beam Micro/Nano Processing

Published:2024-02 Issue:2 Volume:45 Page:172-175
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Fu Shihao¹^ORCID,Wang Yuefei¹,Han Yurui¹,Hou Enzhu¹,Gao Chong¹,Li Bingsheng¹^ORCID,Ma Jiangang¹^ORCID,Fu Zhendong²^ORCID,Xu Haiyang¹^ORCID,Shen Aidong³^ORCID,Liu Yichun¹

Affiliation:

1. Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun, China

2. Tianjin Jinhang Technical Physics Institute, Tianjin, China

3. Department of Electrical Engineering, The City College of New York, New York, NY, USA

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10415514/10335723.pdf?arnumber=10335723

Reference38 articles.

1. New concept ultraviolet photodetectors

2. Ultra-sensitive flexible Ga2O3 solar-blind photodetector array realized via ultra-thin absorbing medium

3. High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

4. An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

5. Radiation hardness evaluation of ε-Ga2O3 thin-film devices under swift heavy ion irradiation

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