Surface Acoustic Wave Resonators Using a Novel ε-Ga<sub>2</sub> O<sub>3</sub> Piezoelectric Film Grown on Sapphire-Reference-Cited by-同舟云学术

Surface Acoustic Wave Resonators Using a Novel ε-Ga₂ O₃ Piezoelectric Film Grown on Sapphire

Published:2023-06 Issue:6 Volume:44 Page:895-898
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tu Yujia¹^ORCID,Chen Weiqu¹,Zhang Zhipeng¹,Chen Zimin¹^ORCID,Pei Yanli¹^ORCID,Wang Gang¹,Lu Xing¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10132335/10106247.pdf?arnumber=10106247

Reference35 articles.

1. A review of Ga2O3materials, processing, and devices

2. High Q surface acoustic wave resonators in 2–3 GHz range using ScAlN/single crystalline diamond structure

3. AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators

4. Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices

5. Guest Editorial: The dawn of gallium oxide microelectronics

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1. Strain relaxation in ε-Ga2O3 thin films grown on vicinal (0001) sapphire substrates;Journal of Alloys and Compounds;2024-06

2. First-Principles Prediction of κ-Ga₂O₃:N Ferromagnetism;The Journal of Physical Chemistry C;2024-04-26

3. Theoretical analysis of bulk acoustic wave resonators with emerging ε -Ga2O3 piezoelectric film;Applied Physics Letters;2024-01-15

4. Demonstration of High-overtone Bulk Acoustic Resonators using an Epitaxial ε-Ga₂O₃ Piezoelectric Film on SiC;2023 IEEE International Ultrasonics Symposium (IUS);2023-09-03