Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process-Reference-Cited by-同舟云学术

Enhancement of Magnetic and Electric Transport Performance of Perpendicular Spin-Orbit Torque Magnetic Tunnel Junction by Stop-on-MgO Etching Process

Published:2023-03 Issue:3 Volume:44 Page:408-411
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhao Lei¹^ORCID,Yang Meiyin¹^ORCID,Gao Jianfeng¹,Yang Tengzhi¹^ORCID,Cui Yan¹,Xu Jing¹^ORCID,Li Junfeng¹,Xiang Qingyi²,Li Wenjing²,Luo Feilong²,Ye Li²,Luo Jun¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China

2. Hisilicon (Shanghai) Technologies Company Ltd., Shanghai, China

Funder

Chinese Academy of Sciences

National Key Research and Development Program of China

Hisilicon Technologies

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10016628.pdf?arnumber=10016628

Reference27 articles.

1. Improvement of electric and magnetic properties of patterned magnetic tunnel junctions by recovery of damaged layer using oxygen showering post-treatment process

2. CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist

3. Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

4. Ion beam etching dependence of spin–orbit torque memory devices with switching current densities reduced by Hf interlayers

5. Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process

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