1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier-Reference-Cited by-同舟云学术

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Published:2023-07 Issue:7 Volume:44 Page:1052-1055
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Qin Yuan¹^ORCID,Xiao Ming¹^ORCID,Zhang Ruizhe¹^ORCID,Xie Qingyun²^ORCID,Palacios Tomás²^ORCID,Wang Boyan¹^ORCID,Ma Yunwei¹^ORCID,Kravchenko Ivan³^ORCID,Briggs Dayrl P³^ORCID,Hensley Dale K³^ORCID,Srijanto Bernadeta R³,Zhang Yuhao¹

Affiliation:

1. Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

2. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA

3. Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge, TN, USA

Funder

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/10168002/10142011-aam.pdf

Reference35 articles.

1. Multidimensional device architectures for efficient power electronics

2. GaN-on-Si Power Technology: Devices and Applications

3. 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

4. Multi-Channel Monolithic-Cascode HEMT (MC²-HEMT): A New GaN Power Switch up to 10 kV

5. (Ultra)Wide-Bandgap Vertical Power FinFETs

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