Vertical SnS2/Cr–SnS2 n–n Homostructure for High-Responsivity and Fast-Response 405 nm Near-Ultraviolet Detectors
Author:
Affiliation:
1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China
2. Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications, Hangzhou, China
Funder
National Natural Science Foundation of China
Zhejiang Provincial Natural Science Foundation of China
Hebei Provincial Department of Education Innovation Ability Training Funding Project for Graduate Students
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10168002/10121421.pdf?arnumber=10121421
Reference28 articles.
1. High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures
2. Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications
3. Enhanced UV photodetection behavior of Cr doped wurtzite ZnO crystalline nanorods
4. Out‐of‐Plane Homojunction Enabled High Performance SnS 2 Lateral Phototransistor
5. Novel Transparent and Self-Powered UV Photodetector Based on Crossed ZnO Nanofiber Array Homojunction
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