Out‐of‐Plane Homojunction Enabled High Performance SnS 2 Lateral Phototransistor-Reference-Cited by-同舟云学术

Out‐of‐Plane Homojunction Enabled High Performance SnS 2 Lateral Phototransistor

Published:2020-02-28 Issue:9 Volume:8 Page:1901971
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Gao Jing¹^ORCID,Yang Hang¹²,Mao Hongying³,Liu Tao⁴,Zheng Yue¹,Wang Yanan¹,Xiang Du⁴,Han Cheng⁵,Chen Wei¹⁴⁶⁷^ORCID

Affiliation:

1. Department of PhysicsNational University of Singapore 2 Science Drive 3 Singapore 117542 Singapore

2. College of Arts and ScienceNational University of Defense Technology Changsha 410073 China

3. Department of PhysicsHangzhou Normal University Hangzhou 310036 China

4. Department of ChemistryNational University of Singapore 3 Science Drive 3 Singapore 117543 Singapore

5. SZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyShenzhen University Shenzhen 518060 China

6. Joint School of National University of Singapore and Tianjin UniversityInternational Campus of Tianjin University Binhai New City Fuzhou 350207 P. R. China

7. National University of Singapore (Suzhou) Research Institute 377 Lin Quan Street, Suzhou Industrial Park Suzhou Jiangsu 215123 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Ministry of Education - Singapore

National University of Singapore

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901971

Reference44 articles.

1. High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

2. Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

3. Photosensor Device Based on Few-Layered WS2Films

4. Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers

5. Single-Layer MoS2 Phototransistors

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