High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures-Reference-Cited by-同舟云学术

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High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures

Published:2022-12-03 Issue:3 Volume:11 Page:2202087
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Liu Zhe¹,Jia Xiyu¹,Duan Weishuai¹,Zhu Xinfa¹,He Biao¹,Sun Chun¹,Wang Mengjun¹,Li Erping¹²,Fan Chao¹^ORCID

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Tianjin 300401 China

2. Zhejiang Provincial Key Laboratory of Advanced Microelectronic Intelligent Systems and Applications Zhejiang University Hangzhou 310027 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202202087

Reference46 articles.

1. Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

2. Enhanced photocatalysis for water splitting in layered tin chalcogenides with high carrier mobility

3. Modification of the structural and optical properties of Fe-doped SnS2 thin film

4. Ultrathin SnS2 nanosheets of ultrasonic synthesis and their photoresponses from ultraviolet to near-infrared

5. High on/off ratio photosensitive field effect transistors based on few layer SnS2

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3. Construction of branched SnS2/Te heterostructure film for self-powered high-performance photodetector application;Journal of Alloys and Compounds;2024-05

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