Transparent Multi-Level NAND Flash Memory and Circuits Based on ZnO Thin Film Transistor
Author:
Affiliation:
1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Funder
National Science Foundation of Zhejiang Province, China
NSFC
Sichuan Science and Technology Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10081123/10050534.pdf?arnumber=10050534
Reference29 articles.
1. Transparent Capacitive-Type Fingerprint Sensing Based on Zinc Oxide Thin-Film Transistors
2. 19.5 μW ultra‐low‐power 13.56 MHz RFID tag based on transparent zinc‐oxide thin‐film transistors
3. Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window
4. Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory
5. Low-Power Transparent RFID Circuits Using Enhancement/Depletion Logic Gates Based on Deuterium-Treated ZnO TFTs
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1. Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals;Nanomaterials;2024-04-14
2. IGZO charge trap flash device for reconfigurable logic functions;Applied Physics Letters;2024-03-18
3. Consistent Performance ZnO TFT Based Single Transistor Nonvolatile Memory with Minimal Charge Loss;Transactions on Electrical and Electronic Materials;2024-02-24
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