High-Sensitivity Solar-Blind Photodetector Based on β-Ga2O3 Schottky Junction Under Forward and Reverse Bias
Author:
Affiliation:
1. Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun, China
2. Tianjin Jinhang Technical Physics Institute, Tianjin, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10230308/10187895.pdf?arnumber=10187895
Reference26 articles.
1. Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga2O3
2. Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga 2 O 3 Nanowires for DUV Photodetector and Image Sensor Application
3. β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters
4. Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction
5. Diamond-Based All-Carbon Photodetectors for Solar-Blind Imaging
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