β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters
Author:
Affiliation:
1. Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, China
2. Department of Tianjin Jinhang Technical Physics Institute, Tianjin, China
Funder
National Key Technologies Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9866921/09832952.pdf?arnumber=9832952
Reference31 articles.
1. Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga 2 O 3 Nanowires for DUV Photodetector and Image Sensor Application
2. A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode
3. Self‐Powered and Spectrally Distinctive Nanoporous Ga 2 O 3 /GaN Epitaxial Heterojunction UV Photodetectors
4. The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process
5. Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction
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