Thermal Stability of the Avalanche-Like Breakdown Performance in Conjugated Polymer-Based Lateral Power Devices-Reference-Cited by-同舟云学术

Thermal Stability of the Avalanche-Like Breakdown Performance in Conjugated Polymer-Based Lateral Power Devices

Published:2023-12 Issue:12 Volume:44 Page:1991-1994
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Haonan¹^ORCID,Zhang Jun¹^ORCID,Zhou Jiayi¹^ORCID,Wang Yuhao¹^ORCID,Li Man¹^ORCID,Zhang Maolin¹^ORCID,Chen Jing¹^ORCID,Yao Jiafei¹^ORCID,Zhang Guobin²,Bai Song²,Guo Yufeng¹^ORCID

Affiliation:

1. National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, the College of Electronic and Optical Engineering, and the College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China

2. State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing, China

Funder

National Natural Science Foundation of China

Jiangsu Association for Science and Technology Youth Science and Technology Talents Lifting Project

Natural Science Foundation of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10330769/10292937.pdf?arnumber=10292937

Reference18 articles.

1. Characteristics of SiC MOSFET in a Wide Temperature Range

2. High temperature stability evaluation of SiC MOSFETs

3. High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

4. 1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

5. Study of field effect mobility in PCBM films and P3HT:PCBM blends

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