High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep46664.pdf
Reference28 articles.
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2. Watanabe, T. et al. InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging. Sensors Journal, IEEE 13, 89–99, doi: 10.1109/JSEN.2012.2225831 (2013).
3. Lisauskas, A. et al. Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors. Journal of Applied Physics 105, 114511; doi: http://dx.doi.org/10.1063/1.3140611 (2009).
4. Drexler, C. et al. Helicity sensitive terahertz radiation detection by field effect transistors. Journal of Applied Physics 111, 124504, doi: http://dx.doi.org/10.1063/1.4729043 (2012).
5. Sakowicz, M. et al. Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors. Journal of Applied Physics 104, 024519, doi: http://dx.doi.org/10.1063/1.2957065 (2008).
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