Polarization Switching and Charge Trapping in HfO2-Based Ferroelectric Transistors
Author:
Affiliation:
1. Ferroelectric Memory GmbH, Dresden, Germany
2. Applied Materials Inc., Santa Clara, CA, USA
3. NaMLab gGmbH, Dresden, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10294238/10261242.pdf?arnumber=10261242
Reference33 articles.
1. Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation
2. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories;yurchuk;Proc IEEE Int Rel Phys Symp,2014
3. Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis
4. HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications
5. Impact of charge trapping on the ferroelectric switching behavior of doped HfO2;peši?;Phys Status Solidi A,2016
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