First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications-Reference-Cited by-同舟云学术

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Published:2022-04 Issue:4 Volume:69 Page:2101-2107
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chang Shu-Wei¹,Lu Tsung-Han²,Yang Cong-Yi¹,Yeh Cheng-Jui¹,Huang Min-Kun¹,Meng Ching-Fan²,Chen Po-Jen³,Chang Ting-Hsuan³,Chang Yan-Shiuan³,Jhu Jhe-Wei³,Hong Tzu-Chieh⁴,Ke Chu-Chu⁵,Yu Xin-Ren¹,Lu Wen-Hsiang¹,Baig Mohammed Aftab¹,Cho Ta-Chun⁶^ORCID,Sung Po-Jung⁶,Su Chun-Jung⁶,Hsueh Fu-Kuo⁶,Chen Bo-Yuan⁶,Hu Hsin-Hui²^ORCID,Wu Chien-Ting⁶,Lin Kun-Lin⁶^ORCID,Ma William Cheng-Yu³^ORCID,Lu Darsen D.¹^ORCID,Kao Kuo-Hsing¹^ORCID,Lee Yao-Jen⁶^ORCID,Lin Cheng-Li⁵,Huang Kun-Ping⁷,Chen Kun-Ming⁶^ORCID,Li Yiming⁸^ORCID,Samukawa Seiji⁹^ORCID,Chao Tien-Sheng⁴^ORCID,Huang Guo-Wei⁶^ORCID,Wu Wen-Fa⁶^ORCID,Lee Wen-Hsi¹^ORCID,Li Jiun-Yun¹⁰^ORCID,Shieh Jia-Min⁶^ORCID,Tarng Jenn-Hwan⁸^ORCID,Wang Yeong-Her¹^ORCID,Yeh Wen-Kuan⁶

Affiliation:

1. Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

2. Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan

3. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

5. Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan

6. Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

7. MMSL, Industrial Technology Research Institute, Hsinchu, Taiwan

8. Department of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

9. Institute of Fluid Science, Tohoku University, Sendai, Japan

10. Department of Electronics Engineering, National Taiwan University, Taipei, Taiwan

Funder

Higher Education Sprout Project of the National Yang Ming Chiao Tung University (NYCU) and Ministry of Education (MOE), Taiwan

Ministry of Science and Technology, Taiwan

Hitachi High-Tech Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09691894.pdf?arnumber=9691894

Reference23 articles.

1. Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

2. Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

3. P-channel transparent thin-film transistor using physical-vapor-deposited NiO layer

4. Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

5. Flexible Light‐to‐Frequency Conversion Circuits Built with Si‐Based Frequency‐to‐Digital Converters via Complementary Photosensitive Ring Oscillators with p‐Type SWNT and n‐Type a‐IGZO Thin Film Transistors

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