Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization-Reference-Cited by-同舟云学术

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Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

Published:2021-06-22 Issue:26 Volume:13 Page:30818-30825
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Hye-Mi¹,Choi Su-Hwan²^ORCID,Jeong Hyun Jun¹^ORCID,Lee Jung-Hoon¹,Kim Junghwan³^ORCID,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Nagatsuta 4259, Yohohama 226-8503, Japan

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c06038

Reference46 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Detection of CO and O2 Using Tin Oxide Nanowire Sensors

3. The tin oxide gas sensor and its applications

4. Porous Tin Oxide Nanostructured Microspheres for Sensor Applications

5. Dye-sensitized solid state photovoltaic cell based on composite zinc oxide/tin (IV) oxide films

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