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Total Ionizing Dose Effects in FDSOI Compact Model for IC Design

  • Published:2019-07 Issue:7 Volume:66 Page:1628-1633
  • ISSN:0018-9499
  • Container-title:IEEE Transactions on Nuclear Science
  • language:
  • Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Rostand N.ORCID,Martinie S.,Gaillardin M.ORCID,Marcandella C.,Rozeau O.,Lacord J.ORCID,Barbe J.-C.,Poiroux T.ORCID,Hubert G.ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material level analytical model of total ionizing dose induced DC characteristics shift for FDSOI IC design;Microelectronics Reliability;2023-12

2. FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement Introducing Low-Field Quantum Mechanical Correction;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

3. Holistic Device Modeling: Toward a Unified MOSFET Model Including Variability, Aging, and Extreme Operating Conditions;IEEE Transactions on Circuits and Systems II: Express Briefs;2022-06

4. Impact of Interface Trap Charges on the Performances of Junctionless MOSFET in Sub-Threshold Regime;Computers and Electrical Engineering;2022-05

5. A Mixed Method to Mitigate the TID Effects on 28nm FDSOI Transistors;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10
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