Holistic Device Modeling: Toward a Unified MOSFET Model Including Variability, Aging, and Extreme Operating Conditions
Author:
Affiliation:
1. Department of Electronics and Communications Engineering, Istanbul Technical University, Istanbul, Turkey
Funder
Technological Research Council of Turkey
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/9786589/09764807.pdf?arnumber=9764807
Reference46 articles.
1. Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures
2. Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K
3. Total Ionizing Dose Effects in FDSOI Compact Model for IC Design
4. Identify Silent Data Corruption Vulnerable Instructions Using SVM
5. Soft Error Rate Improvements in 14-nm Technology Featuring Second-Generation 3D Tri-Gate Transistors
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