Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations-Reference-Cited by-同舟云学术

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Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

Published:2012-05 Issue:5 Volume:59 Page:1236-1244
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Zeqin,Gildenblat Gennady,McAndrew Colin C.,Lim Ik-Sung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6186852/06159075.pdf?arnumber=6159075

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors;Chinese Physics B;2023-05-01

2. Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model;Solid-State Electronics;2023-01

3. Planar MOSFETs and Their Application to IC Design;Springer Handbook of Semiconductor Devices;2022-11-11

4. Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics;IEEE Open Journal of the Solid-State Circuits Society;2022

5. An Accurate Analytical Model for Small Signal Behavior of MOSFET in Terahertz Applications;2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2021-11-24

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