Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation;Chan;Trans Electron Dev,2006
2. A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis;Navarro;Trans Electron Dev,2006
3. Accurate RTA-based nonquasi-static MOSFET model for RF and mixed-signal simulations;Zhu;Trans Electron Dev,2012
4. A unified nonquasi-static MOSFET model for large-signal and small-signal simulations;Wang;Trans Electron Dev,2006
5. PSP 103.7 Verilog-A and documentation. http://www.cea.fr/cea-tech/leti/pspsupport.
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