A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-V<inf>MIN</inf> applications-Reference-Cited by-同舟云学术

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A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications

Published:2013-02 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers
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Author:

Chang J.,Yen-Huei Chen ,Cheng H.,Wei-Min Chan ,Hung-Jen Liao ,Li Q.,Chang S.,Natarajan S.,Lee R.,Ping-Wei Wang ,Shyue-Shyh Lin ,Chung-Cheng Wu ,Kuan-Lun Cheng ,Min Cao ,Chang G. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6480926/6487590/06487750.pdf?arnumber=6487750

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2024-08

2. Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory;Sensors;2023-12-19

3. Analytical Model of SRAM VMin to Predict Reliability and Process Impact;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

4. Cross-Coupled nFET Preamplifier for Low Voltage SRAM;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-09

5. Impact of interconnects enhancement on SRAM design beyond 5nm technology node;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

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